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Désignation |
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Stock: 0
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TIP42C - Si-P 140V 6A 65w . |
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2N6027 . |
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BF472 - Si-P 300V 30mA 2W 60MHz DIODE. SI-P 300V 30MA 2W 60MHZ. Boîtier: TO126. |
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2N3055/DIV - Si-N 100V 15A 115W 800Khz . |
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BD137 - Transistor Au Silicium Npn 60V-1A-8w type n°: BD137description: si-npnvaleurs nominales: 60V-1A-8Wremarques: boîtier TO126 |
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Stock: 0
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BD437 - Transistor Au Silicium Npn 45V-4A type n°: BD437description: si-npnvaleurs nominales: 45V-4Aremarques: - |
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BD677 - Transistor Au Silicium Npn 60V Power Darlington type n°: BD677description: si-npnvaleurs nominales: 60Vremarques: power darlington |
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BD679 - Transistor Au Silicium Npn 80V Power Darlington type n°: BD679description: si-npnvaleurs nominales: 80Vremarques: power darlington |
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Stock: 0
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2SB649A - Si-P 160V 1.5A 1W 140MHz . |
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2SC1775A , Hitachi - Si-N 120V 0.05A 0.2W uni . |
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2SC2362 , Sanyo - Si-N 120V 50mA 0.4W 130mh . |
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BD442 - Si-P 80V 4A 36W 3MHz . |
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BF871 - Si-N 300V 0.1A 1.8w . |
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BS108 - N-FET 200V 0.23A 0.8W 8e . |
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MJE350 - Si-P 300V 0.5A 20W vidpow . |
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BF245A - MOSFET N-channel type n°: BF245Adescription: n-chvaleurs nominales: Ids=6.5mAboîtier: - |
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Stock: 0
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BD140 - Transistor Au Silicium Pnp 80V-1A-8w type n°: BD140description: si-pnpvaleurs nominales: 80V-1A-8Wremarques: boîtier TO126 |
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Stock: 0
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BD237 - Transistor Au Silicium Npn 100V-2A type n°: BD237description: si-npn povaleurs nominales: 100V-2Aremarques: - |
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Stock: 0
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2SA1381 - Si-P 300V 0.1A 150MHz . |
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Stock: 0
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2SA966 , Toshiba - Si-P 30V 1.5A 0.9W 120MHz . |
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Stock: 0
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2SC1384 , MAT - Si-N 60V 1A 1W 200MHz . |
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2SC2705 , Toshiba - Si-N 150V 50mA 0.8W 200mh . |
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2SC3052F-MIT - Si-N 50V 0.2A 0.15W 200mh . |
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2SC3402 , Sanyo - Si-N 50V 0.1A 250MHz 10K/ . |
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2SD471 - Si-N 30V 1A 0.8W uni (ebc . |
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Stock: 0
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2SD734 , Sanyo - Si-N 25V 0.7A 0.6W 250MHz . |
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Stock: 0
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BCP53 - si-n 80V 1A 1.5W 50MHz . |
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Stock: 0
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BCY79 - Si-P 45V 0.2A 1W 180MHz . |
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Stock: 0
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J310 - N-FET 25V 60mA up<6.5V vh . |
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Stock: 0
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BF245C - MOSFET N-channel type n°: BF245Cdescription: n-chvaleurs nominales: Ids=25mAboîtier: - |
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Stock: 0
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BS170 - MOSFET N-channel 60V type n°: BS170description: n-chvaleurs nominales: 60Vboîtier: TO92 |
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Stock: 0
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BD135 - Transistor Au Silicium Npn 45V-1A-8w type n°: BD135description: si-npnvaleurs nominales: 45V-1A-8Wremarques: boîtier TO126 |
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Stock: 0
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BD138 - Transistor Au Silicium Pnp 60V-1A-8w type n°: BD138description: si-pnpvaleurs nominales: 60V-1A-8Wremarques: boîtier TO126 |
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Stock: 0
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2N3819 - N-FET 25V 20mA 0.36w . |
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2N6520 - Si-P 350V 0.5A 0.625W >40 . |
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2SC1047 , MAT - Si-N 30V 20mA 0.4W 650MHz . |
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2SC815 - Si-N 60V 0.2A 0.25W 200mh . |
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BCX53 - Si-P 100V 1A 50MHz . |
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Stock: 0
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BD140-16 - Si-P 80V 1.5A 12.5W 50MHz . |
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Stock: 0
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BF245B - N-FET 30V 25mA 0.3w . |
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BF820 - Si-N 300V 25mA >60MHz . |
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KSA928A , SSU - n.y.a./Si-P 30V 2A 1W 120 . |
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Stock: 0
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2N2907A Si-Pnp Af 60V-0.6A-200Mhz (Ou Pn2907A) type n°: 2N2907Adescription: si-npn afvaleurs nominales: 60V-0.6Aremarques: 200MHz |
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Stock: 0
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2SC1627 , Toshiba - Si-N 80V 0.4A 0.8W 100MHz . |
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