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P600K - Si-D 800V 6A/400Ap
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1N5822, Sb-D 40V 3A/80Ap stky
. SB-D 40V 3A/80Ap STKY |
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RGP30M-DIO - Si-D 1000V 3A/125Ap 500ns
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diode bzv55-c5V1
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 5V1BZV55-C5V1130.80884 |
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diode bzv55-c20
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 20VBZV55-C20130.81143 |
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diode bzv55c24
Philips reference diode BZV55-C24. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 24VBZV55-C24130.81509 |
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diode bzv55 c6V2
. DIODE BZV55 C6V2 |
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BY399 - Si-D 800V 3A/100Ap 500ns
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OA90 , Ge-D 45V 35ma/0.2Ap
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SB160, Sb-D 60V 1A/25Ap
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BAT41, Sb-D 100V 0.1A
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BY255 - Si-D 1300V 3A/100Ap
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BY398 - Si-D 400V 3A/200Ap 150ns
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1N5819, Sb-D 40V 1A/25Ap
. SB-D 40V 1A/25Ap |
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BAT85, Sb-D 30V 0.2A stky 10pF
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BAW56 - 2xSi-D 70V 0.2A 6ns a1
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EM516 - Si-D 1800V 1A/50Ap
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UF4007 - Si-D 1000V 1A/50Ap 75ns
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diode bzv55-c33
Philips reference diode BZV55-C33. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 33VBZV55-C33130.80881 |
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diode bzv55-c7V5
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 7V5BZV55-C7V5130.80906 |
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diode bzv55-c2V7
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 2V7BZV55-C2V7130.81138 |
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diode bzv55-c13
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 13VBZV55-C13130.81281 |
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diode bzv55-c9V1
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 9V1BZV55-C9V1130.82583 |
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1N60 , Ge-D 45V 35ma/0.2Ap
. GE-D 45V 35mA/0.2Ap =AA11 |
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1N5399 - Si-D 1000V 1.5A/10Ap
. SI-D 1000V 1.5A/10Ap |
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1N5408 - Si-D 1000V 3A/200Ap
. SI-D 1000V 3A/200Ap |
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BA159 - Si-D 1000V 1A/35Ap 300ns
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BAS16 - Si-D 75V 0.25A 6ns a6
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BAV21 - Si-D 200V 0.2A/0.5Ap 50ns
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BAV99 - 2xSi-D 70V 0.2A 6ns a7
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BY133 - Si-D 1300V 1A/50Ap
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BY299 - Si-D 800V 2A/70Ap 500ns
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FR157 - Si-D 1000V 1.5A/60Ap 500n
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LL4148 - Si-D 75V 0.15A 0.5w 4ns
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BAW62 - Si-D 75V 0.2A/0.45Ap 4ns
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By228 Fast Rectif. - 1500V/3A
tension inverse de crête: 1500Vcourant redressé max.: 5Acourant direct de crête répétitif: -courant inverse max. (25°C): 5µAtension directe max.: 1.5Vremarques: rapide - sur bobineboîtier: fig. 4 |
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1N4007 - Si-D 1000V 1A/50Ap
. SI-D 1000V 1A/50Ap |
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1N4007 1A/1000V Taped On Reel
tension inverse de crête: 1000Vcourant redressé max.: 1Acourant direct de crête répétitif: 10Acourant inverse max. (25°C): 5µAtension directe max.: 1.1Vremarques: sur bobineboîtier: fig. 1 |
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1N4148 - Si-D 75V 0.15A/0.5Ap 4ns
. SI-D 75V 0.15A/0.5Ap 4ns |
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Diode "Petits Signaux" 150mA - 100V
tension inverse de crête: 100Vcourant redressé max.: 150mAcourant direct de crête répétitif: 450mAcourant inverse max. (25°C): -tension directe max.: 1Vremarques: sur bobineboîtier: fig. 13 |
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transient surpressor 130V
French article, on request. |
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1N5062 - Si-D 800V 2A/50Ap 6us
. SI-D 800V 2A/50Ap 6us |
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